triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 1 wideband mmwave vpin spdt switch TGS4301-EPU key features ? 24-43 ghz high isolation spdt ? < 2 db typical insertion loss ? -10db typical return loss ? on-chip bias resistors ? flexible bias pad configuration ? reflective switch design ? integrated dc blocks on rf pads ? 2.164 x 1.055 x 0.1 mm (2.283 mm 2 ) primary applications ? point-to-point radio ? point-to-multipoint radio ? ka band vsat ?lmds note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -5 -4 -3 -2 -1 0 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) insertion loss (db) -60 -55 -50 -45 -40 -35 -30 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) isolation (db) fixtured measured performance
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 5v 2/, 3/ v - negative supply voltage range -8 v i + positive supply current (quiescent) 22.5 ma 2/ 3 / p in input continuous wave power tbd 3/ p d power dissipated tbd 3/ t ch operating channel temperature 150 c 5/ t m mounting temperature (30 seconds) 320 c 4/ t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ v + max and i + max are both per bias pad. 3/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 4/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from tbd to tbd hours. 5/ junction operating tem perature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels TGS4301-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 3 TGS4301-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice measured fixtured data bias conditions: vcontrol=5 v, i+=22 ma -5 -4 -3 -2 -1 0 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) insertion loss (db) -60 -55 -50 -45 -40 -35 -30 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) isolation (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 4 TGS4301-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice -35 -30 -25 -20 -15 -10 -5 0 24 26 28 30 32 34 36 38 40 42 44 frequency (ghz) return loss (db) in p ut output measured fixtured data bias conditions: vcontrol=5 v, i+=22 ma function table state rf-b rf-c vb1 or vb2 vc2 or vc1 0 isolated isolated + 5v + 5 v 1 isolated low-loss + 5v -5 v 2 low-loss isolated -5 v + 5v 3 tbd tbd -5 v -5 v
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 5 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice mechanical drawing TGS4301-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 6 mmic carrier plate assembly drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice notes: 1. for biasing flexibility, two sets of bias pads are available for each branch. -control lines 5v (vc2 or vc4, vb1 or vb4) use on-chip resistors for diode current control. -auxiliary pads (vc1 or vc3, vb2 or vb3) can be used if connected to a 20ma current source. 2. positive biasing with both vc2 and vc4 or vb1 and vb4 may increase the switch?s isolation at the expense of higher dissipated power. TGS4301-EPU
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information january 28, 2003 7 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGS4301-EPU note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c.
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